High Speed Devices and Circuits. Instructor: Prof. K. N. Bhat, Department of Electrical Engineering, IIT Madras.
FREE
This course includes
Hours of videos
1138 years, 9 months
Units & Quizzes
41
Unlimited Lifetime access
Access on mobile app
Certificate of Completion
This course discusses topics: important parameters governing the high speed performance of devices and circuits; silicon based MOSFET and BJT circuits for high speed operation and their limitations; materials for high speed devices and circuits; metal semiconductor contacts and Metal Insulator Semiconductor and MOS devices; Metal semiconductor Field Effect Transistors (MESFETs); High Electron Mobility Transistors (HEMT); Heterojunction Bipolar Transistors (HBTs); high speed Circuits; and high frequency resonant-tunneling devices. (from nptel.ac.in)
Course Currilcum
- Lecture 01 – Introduction to Basic Concepts Unlimited
- Lecture 02 – Requirements for High Speed Circuits, Devices and Materials Unlimited
- Lecture 03 – Classification and Properties of Semiconductor Devices Unlimited
- Lecture 04 – Ternary Compound Semiconductors and their Applications Unlimited
- Lecture 05 – Ternary Compound Semiconductors and their Applications (cont.) Unlimited
- Lecture 06 – Crystal Structures in GaAs Unlimited
- Lecture 07 – Dopants and Impurities in GaAs and InP Unlimited
- Lecture 08 – Brief Overview of GaAs Technology for High Speed Devices Unlimited
- Lecture 09 – Epitaxial Techniques for GaAs and High Speed Devices Unlimited
- Lecture 10 – Molecular Beam Epitaxy and Liquid-Phase Epitaxy for GaAs Epitaxy Unlimited
- Lecture 11 – GaAs and InP Devices for Microelectronics Unlimited
- Lecture 12 – Metal Semiconductor Contacts for MESFET Unlimited
- Lecture 13 – Metal Semiconductor Contacts for MESFET (cont.) Unlimited
- Lecture 14 – Metal Semiconductor Contacts for MESFET (cont.) Unlimited
- Lecture 15 – Ohmic Contacts on Semiconductors Unlimited
- Lecture 16 – Fermi Level Pinning, I-V Characteristics of Schottky Barrier Diodes Unlimited
- Lecture 17 – Schottky Barrier Diodes: I-V Characteristics and the Non-Idealities Unlimited
- Lecture 18 – Schottky Barrier Diodes: I-V Characteristics and the Non-Idealities (cont.) Unlimited
- Lecture 19 – Causes of the Non-Idealities in Schottky Barrier Diodes (I-V Characteristics) Unlimited
- Lecture 20 – MESFET Operation and I-V Characteristics Unlimited
- Lecture 21 – I-V Characteristics: Shockley’s Model Unlimited
- Lecture 22 – MESFET Shockley’s Model and Velocity Saturation Effect Unlimited
- Lecture 23 – MESFET Velocity Saturation Effect on Drain Current Saturation Unlimited
- Lecture 24 – MESFET: Drain Current Saturation Ids due to Velocity Saturation Unlimited
- Lecture 25 – MESFET: Effects of Channel Length and Gate Length on I_DS and g_m Unlimited
- Lecture 26 – MESFET: Effects of Velocity Saturation and Velocity Field Characteristics Unlimited
- Lecture 27 – MESFET: Effects of Velocity Field Characteristics – Overshoot Effects Unlimited
- Lecture 28 – MESFET: Velocity Overshoot Effect and Self Aligned MESFET-SAINT Unlimited
- Lecture 29 – Self Aligned MESFET-SAINT Threshold Voltage and Subthreshold Current Unlimited
- Lecture 30 – Hetero Junctions Unlimited
- Lecture 31 – Hetero Junctions and High Electron Mobility Transistor (HEMT) Unlimited
- Lecture 32 – Hetero Junctions and High Electron Mobility Transistor (HEMT) (cont.) Unlimited
- Lecture 33 – High Electron Mobility Transistor (HEMT) Unlimited
- Lecture 34 – HEMT: Off Voltage, I-V Characteristics and Transconductance Unlimited
- Lecture 35 – HEMT: I-V Characteristics and Transconductance and Optimization Unlimited
- Lecture 36 – Indium Phosphide based HEMT Unlimited
- Lecture 37 – Pseudomorphic HEMT and Heterojunction Bipolar Transistors Unlimited
- Lecture 38 – Heterojunction Bipolar Transistors (HBT) Unlimited
- Lecture 39 – Heterojunction Bipolar Transistors (HBT) (cont.) Unlimited
- Lecture 40 – Heterojunction Bipolar Transistors (HBT) (cont.) Unlimited
- Lecture 41 – Heterojunction Bipolar Transistors (HBT) (cont.) Unlimited
