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6.012 is the header course for the department’s “Devices, Circuits and Systems” concentration.
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English
English [CC]
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Description
The topics covered include: modeling of microelectronic devices, basic microelectronic circuit analysis and design, physical electronics of semiconductor junction and metal-on-silicon (MOS) devices, relation of electrical behavior to internal physical processes, development of circuit models, and understanding the uses and limitations of various models. The course uses incremental and large-signal techniques to analyze and design bipolar and field effect transistor circuits, with examples chosen from digital circuits, single-ended and differential linear amplifiers, and other integrated circuits.
Course content
- 6.012 outline: grading, ethics Unlimited
- Intrinsic semiconductors, Unlimited
- Carrier transport, Unlimited
- The p-n junction Unlimited
- The p-n junction in thermal equilibrium Unlimited
- MOS capacitor under applied bias Unlimited
- MOSFET physical structure Unlimited
- MOS transistor, backgate effect, MOSFET in saturation Unlimited
- MOSFET small-signal model Unlimited
- Digital logic concepts Unlimited
- NMOS/current source load, Unlimited
- CMOS inverter, propagation delay model, static CMOS gates Unlimited
- p-n junction diode terminal characteristics Unlimited
- Short base approximation, Unlimited
- p-n junction diode circuit model, Unlimited
- Introduction of bipolar junction transistor, Unlimited
- Reverse active mode and saturation, the Ebers-Moll model Unlimited
- Single stage amplifiers Unlimited
- Common base/gate amplifier, common collector/drain Unlimited
- Review frequency domain analysis; current gain frequency response of common emitter amplifier Unlimited
- Voltage gain frequency response of common emitter amplifier, Unlimited
- Open circuit time constant analysis, Unlimited
- Multistage amplifiers, cascading small signal two port models Unlimited
- DC coupling, voltage sources, Unlimited
- Analyzing complex circuits, course wrap-up Unlimited
Instructor
