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Last updated:

September 25, 2023

Duration:

Unlimited Duration

FREE

This course includes:

Unlimited Duration

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Description

Electrical Engineering 130: Integrated-Circuit Devices (Spring 2014, UC Berkeley). Instructor: Professor Sayeef Salahuddin.

This course provides the fundamentals of basic semiconductor devices: the pn-junction diode, the bipolar junction transistor, the metal-oxide-semiconductor capacitor, and the field-effect transistor. Topics covered in this course include: an overview of electronic properties of semiconductor, metal-semiconductor contacts, pn junctions, bipolar transistors, and MOS field-effect transistors. This course will discuss properties that are significant to device operation for integrated circuits, and silicon device fabrication technology.

Course Curriculum

  • Lecture 01 – Introduction, Early History of IC Devices Unlimited
  • Lecture 02 – Semiconductors: The Bond Model, Energy Band Model, Dopants Unlimited
  • Lecture 03 – Wave Nature of Particles, Effective Mass, Number of Carriers Unlimited
  • Lecture 04 – Quantitative Analysis of Carrier Concentration, General Theory of N and P Unlimited
  • Lecture 05 – Carrier Transport Mechanisms: Drift, Physics of Mobility Unlimited
  • Lecture 06 – Drift Current, Diffusion Current, Excess Carriers Unlimited
  • Lecture 07 – Carrier Recombination and Generation, Low Level Injection, Continuity Equations Unlimited
  • Lecture 08 – PN Junction Diodes: Depletion Region, Built-in Potential, Electrostatics Unlimited
  • Lecture 09 – Derivation of Current-Voltage Characteristics of Diode Unlimited
  • Lecture 10 – Depletion Region Width, Capacitance, R-G Current, High Level Injection Unlimited
  • Lecture 11 – Reverse Breakdown, Small Signal Model, Zener Diode, Varactor Diode Unlimited
  • Lecture 12 – Tunnel Diode, Solar Cells, LED, Metal-Semiconductor Contacts Unlimited
  • Lecture 13 – Metal-Semiconductor Junction Unlimited
  • Lecture 14 – I-V Characteristic of a Schottky Junction, Ohmic Contacts Unlimited
  • Lecture 15 – Bipolar Junction Transistors: I-V Characteristic of BJT, Ebers-Moll Model Unlimited
  • Lecture 16 – BJT Currents: Ebers-Moll Model, Base-Width Modulation, Punchthrough Unlimited
  • Lecture 17 – Base Transit Time, Kirk Effect, Circuit Modeling of BJT: Small Signal Model Unlimited
  • Lecture 18 – MOS Capacitor: Structure, Equilibrium Band Diagram Unlimited
  • Lecture 19 – MOS Capacitor: Three Regimes of Operation, MOS C-V Curve Unlimited
  • Lecture 20 – MOS Capacitor: C-V Characteristic, C-V of a MOSFET Unlimited
  • Lecture 21 – Effective Oxide Thickness, The MOSFET, Body Bias in a MOSFET Unlimited
  • Lecture 22 – Body Bias in a MOSFET, MOSFET I-V Unlimited
  • Lecture 23 – Surface Mobility, Inverters, Channel Length Modulation, Velocity Saturation Unlimited
  • Lecture 24 – Velocity Saturation, Subthreshold Current, Gate Induced Drain Leakage Unlimited
  • Lecture 25 – Short Channel Effects (No Audio) Unlimited
  • Lecture 26 – Multi-Gate MOSFETs: Channel Length Scaling, 2D Electrostatics Unlimited

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