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6.720 examines the physics of microelectronic semiconductor devices for silicon integrated circuit applications
FREE
This course includes
Hours of videos
1083 years, 2 months
Units & Quizzes
39
Unlimited Lifetime access
Access on mobile app
Certificate of Completion
Topics covered include: semiconductor fundamentals, p-n junction, metal-oxide semiconductor structure, metal-semiconductor junction, MOS field-effect transistor, and bipolar junction transistor. The course emphasizes physical understanding of device operation through energy band diagrams and short-channel MOSFET device design. Issues in modern device scaling are also outlined. The course is worth 2 Engineering Design Points.
Acknowledgments
Prof. Jesús del Alamo would like to thank Prof. Harry Tuller for his support of and help in teaching the course.
Course Currilcum
- 6.720 overview; fundamental concepts Unlimited
- Intrinsic, extrinsic semiconductors; conduction and valence band density of states (DOS) Unlimited
- Carrier statistics in semiconductors; Fermi level Unlimited
- Generation and recombination mechanisms; equilibrium rates Unlimited
- Generation and recombination rates outside equilibrium Unlimited
- Carrier dynamics; thermal motion Unlimited
- Drift; diffusion; transit time Unlimited
- Non-uniform doping distribution Unlimited
- Quasi-Fermi levels; continuity equations Unlimited
- Shockley equations; majority-carrier type situations Unlimited
- Minority-carrier type situations: statics Unlimited
- Minority-carrier dynamics; space-charge and high resistivity (SCR) transport; carrier multiplication Unlimited
- PN junction: electrostatics in and out of equilibrium Unlimited
- PN junction: depletion capacitance; current-voltage (I-V) characteristics Unlimited
- PN junction: carrier storage; diffusion capacitance; PN diode: parasitics Unlimited
- PN junction dynamics; PN diode: non-ideal and second-order effects Unlimited
- Metal-semiconductor junction electrostatics in and out of equilibrium; capacitance-voltage (C-V) characteristics Unlimited
- Metal semiconductor junction I-V characteristics Unlimited
- Schottky diode; equivalent-circuit model; ohmic contacts Unlimited
- Ideal semiconductor surface Unlimited
- Metal-oxide-semiconductor (MOS) in equilibrium Unlimited
- MOS outside equilibrium; Poisson-Boltzmann formulation Unlimited
- Simplifications to Poisson-Boltzmann formulation Unlimited
- Dynamics of MOS structure: C-V characteristics; three-terminal MOS Unlimited
- Inversion layer transport Unlimited
- Long-channel metal-oxide-semiconductor field-effect (MOSFET): I-V characteristics Unlimited
- I-V characteristics (cont.): body effect, back bias Unlimited
- I-V characteristics (cont.): channel-length modulation, sub threshold regime Unlimited
- C-V characteristics; small-signal equivalent circuit models Unlimited
- Short-channel MOSFET: short-channel effects Unlimited
- MOSFET short-channel effects (cont.) Unlimited
- MOSFET scaling Unlimited
- Evolution of MOSFET design Unlimited
- Bipolar junction transistor (BJT) intro; basic operation Unlimited
- BJT I-V characteristics in forward-active Unlimited
- Other regimes of operation of BJT Unlimited
- BJT C-V characteristics; small-signal equivalent circuit models Unlimited
- BJT high-frequency characteristics Unlimited
- BJT non-ideal effects; evolution of BJT design; bipolar issues in complementary metal-oxide-semiconductor (CMOS) Unlimited
