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Last updated:

October 10, 2022

Duration:

Unlimited Duration

FREE

This course includes:

Unlimited Duration

Badge on Completion

Certificate of completion

Unlimited Duration

Description

6.720 examines the physics of microelectronic semiconductor devices for silicon integrated circuit applications

Topics covered include: semiconductor fundamentals, p-n junction, metal-oxide semiconductor structure, metal-semiconductor junction, MOS field-effect transistor, and bipolar junction transistor. The course emphasizes physical understanding of device operation through energy band diagrams and short-channel MOSFET device design. Issues in modern device scaling are also outlined. The course is worth 2 Engineering Design Points.

Acknowledgments

Prof. Jesús del Alamo would like to thank Prof. Harry Tuller for his support of and help in teaching the course.

Course Curriculum

  • 6.720 overview; fundamental concepts Unlimited
  • Intrinsic, extrinsic semiconductors; conduction and valence band density of states (DOS) Unlimited
  • Carrier statistics in semiconductors; Fermi level Unlimited
  • Generation and recombination mechanisms; equilibrium rates Unlimited
  • Generation and recombination rates outside equilibrium Unlimited
  • Carrier dynamics; thermal motion Unlimited
  • Drift; diffusion; transit time Unlimited
  • Non-uniform doping distribution Unlimited
  • Quasi-Fermi levels; continuity equations Unlimited
  • Shockley equations; majority-carrier type situations Unlimited
  • Minority-carrier type situations: statics Unlimited
  • Minority-carrier dynamics; space-charge and high resistivity (SCR) transport; carrier multiplication Unlimited
  • PN junction: electrostatics in and out of equilibrium Unlimited
  • PN junction: depletion capacitance; current-voltage (I-V) characteristics Unlimited
  • PN junction: carrier storage; diffusion capacitance; PN diode: parasitics Unlimited
  • PN junction dynamics; PN diode: non-ideal and second-order effects Unlimited
  • Metal-semiconductor junction electrostatics in and out of equilibrium; capacitance-voltage (C-V) characteristics Unlimited
  • Metal semiconductor junction I-V characteristics Unlimited
  • Schottky diode; equivalent-circuit model; ohmic contacts Unlimited
  • Ideal semiconductor surface Unlimited
  • Metal-oxide-semiconductor (MOS) in equilibrium Unlimited
  • MOS outside equilibrium; Poisson-Boltzmann formulation Unlimited
  • Simplifications to Poisson-Boltzmann formulation Unlimited
  • Dynamics of MOS structure: C-V characteristics; three-terminal MOS Unlimited
  • Inversion layer transport Unlimited
  • Long-channel metal-oxide-semiconductor field-effect (MOSFET): I-V characteristics Unlimited
  • I-V characteristics (cont.): body effect, back bias Unlimited
  • I-V characteristics (cont.): channel-length modulation, sub threshold regime Unlimited
  • C-V characteristics; small-signal equivalent circuit models Unlimited
  • Short-channel MOSFET: short-channel effects Unlimited
  • MOSFET short-channel effects (cont.) Unlimited
  • MOSFET scaling Unlimited
  • Evolution of MOSFET design Unlimited
  • Bipolar junction transistor (BJT) intro; basic operation Unlimited
  • BJT I-V characteristics in forward-active Unlimited
  • Other regimes of operation of BJT Unlimited
  • BJT C-V characteristics; small-signal equivalent circuit models Unlimited
  • BJT high-frequency characteristics Unlimited
  • BJT non-ideal effects; evolution of BJT design; bipolar issues in complementary metal-oxide-semiconductor (CMOS) Unlimited

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Massachusetts Institute of Technology