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Electrical Engineering 105: Microelectronic Devices and Circuits (Spring 2013, UC Berkeley). Instructor: Professor Sayeef Salahuddin.

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September 25, 2023

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Description

Electrical Engineering 105: Microelectronic Devices and Circuits (Spring 2013, UC Berkeley). Instructor: Professor Sayeef Salahuddin.

This course covers the fundamental circuit and device concepts needed to understand analog integrated circuits. After an overview of the basic properties of semiconductors, the p-n junction and MOS capacitors are described and the MOSFET is modeled as a large-signal device. Two port small-signal amplifiers and their realization using single stage and multistage CMOS building blocks are discussed.

Course Curriculum

  • Lecture 01 – Course Introduction, Early History of IC Devices Unlimited
  • Lecture 02 – Semiconductor Basics: Materials, Electronic Properties of Silicon, Doping Unlimited
  • Lecture 03 – Semiconductor Basics: Energy Band Model, Dopants Unlimited
  • Lecture 04 – Electron and Hole Concentrations, Carrier Drift, Drift Current, Carrier Diffusion Unlimited
  • Lecture 05 – Carrier Diffusion, PN Junction Diodes: Carrier Diffusion and Depletion Region Unlimited
  • Lecture 06 – PN Junction Diodes: Built-in Potential, Equilibrium (zero bias) Unlimited
  • Lecture 07 – PN Junction Under Forward Bias Unlimited
  • Lecture 08 – Diode Current Under Forward Bias, PN Junction Under Reverse Bias Unlimited
  • Lecture 09 – PN Junction Diodes: Capacitance, Reverse Breakdown Unlimited
  • Lecture 10 – PN Junction Diodes: Diode DC Bias Calculations, Large and Small Signal Analysis Unlimited
  • Lecture 13 – Bipolar Junction Transistors: Structure, NPN BJT Operation, Current Flow Unlimited
  • Lecture 14 – BJT Biasing, I-V Characteristics, Large Signal Model, Small Signal Model Unlimited
  • Lecture 15 – BJT Small Signal Model, The Early Effect Unlimited
  • Lecture 16 – PNP Transistors, BJT Amplifiers: Overview, Impedances Unlimited
  • Lecture 17 – BJT Amplifiers: DC Biasing, Bias Circuit Design Procedure, Amplifier Topologies Unlimited
  • Lecture 18 – Amplifier Topologies: Common-Emitter Topology Unlimited
  • Lecture 20 – Common-Emitter Topology: Degenerated CE Stage Unlimited
  • Lecture 21 – Common-Base Amplifier, Emitter Follower (Common-Collector Amplifier) Unlimited
  • Lecture 22 – Bipolar Junction Transistors: Analysis by Inspection Unlimited
  • Lecture 24 – Bipolar Junction Transistors: Cascodes Unlimited
  • Lecture 26 – Bipolar Junction Transistors: Current Mirrors, Frequency Response Unlimited
  • Lecture 30 – BJTs: Problem Solving, BJT High-Frequency Model, Miller’s Theorem Unlimited
  • Lecture 31 – BJT Frequency Response: Miller Effect Unlimited
  • Lecture 32 – Differential Amplifiers: General Considerations, BJT Differential Pair Unlimited
  • Lecture 33 – Differential Amplifiers (cont.) Unlimited
  • Lecture 35 – MOSFET: MOS Capacitor, Three Regions of Operation, MOS C-V Curve Unlimited
  • Lecture 36 – MOS Small-Signal Capacitance Model, MOSFET I-V, Channel-Length Modulation Unlimited
  • Lecture 37 – Body Bias in a MOSFET, Velocity Saturation, Drain Induced Barrier Lowering Unlimited
  • Lecture 39 – MOSFET Models, MOSFET Amplifiers, MOSFET Biasing, CS Stage Unlimited
  • Lecture 40 – Common-Gate Stage, Source Follower, Amplifier Examples, MOS Cascodes Unlimited
  • Lecture 42 – MOSFET Frequency Response, MOSFET Differential Pair Unlimited
  • Lecture 43 – Negative Feedback System, Inverter, NAND Unlimited

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