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Solid State Devices. Instructor: Prof. S. Karmalkar, Department of Electrical Engineering, IIT Madras.
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Description
This course discusses the physics of semiconductors, the structure and fabrication of semiconductor devices as well as the operation of them. Topics include: evolution and uniqueness of semiconductor technology, equilibrium carrier concentration, carrier transport, excess carriers, procedure for analyzing semiconductor devices, pn junctions, bipolar junction transistors, Metal-Oxide-Semiconductor(MOS) junctions, MOS Field Effect Transistors, and other types of FETs such as Junction FETs, Metal Semiconductor FETs and Heterojunction FETs. (from nptel.ac.in)
Course content
- Lecture 01 – Introduction to Solid State Devices Unlimited
- Lecture 02 – Evolution and Uniqueness of Semiconductor Unlimited
- Lecture 03 – Equilibrium Carrier Concentration: Types of Semiconductors, Thermal Equilibrium Unlimited
- Lecture 04 – Wave-particle Duality, Bond Model of an Intrinsic Semiconductor Unlimited
- Lecture 05 – Electron Hole Pair Generation and Recombination, Hole Concept, … Unlimited
- Lecture 06 – Energy Band Model: Allowed States Unlimited
- Lecture 07 – Energy Band Model: Distribution of Allowed States over Energy, Fermi-Dirac Function Unlimited
- Lecture 08 – Energy Band Model: Fermi-Dirac Function and Fermi-Level Unlimited
- Lecture 09 – Extrinsic Semiconductor under Equilibrium: Bond Model Unlimited
- Lecture 10 – Band Model of an Extrinsic Semiconductor, Fermi-Dirac Function and Fermi-Level Unlimited
- Lecture 11 – Estimation of Carrier Concentration and Fermi-Level Unlimited
- Lecture 12 – Carrier Transport Unlimited
- Lecture 13 – Carrier Transport: Drift, Diffusion, Mobility Unlimited
- Lecture 14 – Carrier Transport: Mobility in Silicon, Resistivity in Extrinsic Silicon Unlimited
- Lecture 15 – Excess Carriers: Injection Level, Quasi-Fermi Level Unlimited
- Lecture 16 – Excess Carriers: Lifetime, Direct and Indirect Recombination, Surface Recombination Unlimited
- Lecture 17 – Procedure for Device Analysis Unlimited
- Lecture 18 – Procedure for Device Analysis (cont.) Unlimited
- Lecture 19 – PN Junction: Characteristics, Device Structure and Fabrication Unlimited
- Lecture 20 – PN Junction: Equilibrium Analysis Unlimited
- Lecture 21 – PN Junction: Equilibrium Analysis – Solved Examples Unlimited
- Lecture 22 – PN Junction: Ideal I-V Characteristics Unlimited
- Lecture 23 – PN Junction: I-V Characteristics with Forward Bias Unlimited
- Lecture 24 – Energy Band Diagram under Forward Bias, Reverse I-V Characteristics Unlimited
- Lecture 25 – PN Junction: Small-Signal Characteristics Unlimited
- Lecture 26 – Bipolar Junction Transistor: Historical Account, Device Structure Unlimited
- Lecture 27 – Bipolar Junction Transistor: Basics of Transistor Action Unlimited
- Lecture 28 – Bipolar Junction Transistor: Small-Signal Amplification Unlimited
- Lecture 29 – Bipolar Junction Transistor: Small-Signal Amplification (cont.) Unlimited
- Lecture 30 – Bipolar Junction Transistor: Common-Emitter I-V Characteristics Unlimited
- Lecture 31 – Bipolar Junction Transistor: Common-Emitter I-V Characteristics (cont.) Unlimited
- Lecture 32 – Bipolar Junction Transistor: Small-Signal Equivalent Circuit Unlimited
- Lecture 33 – Metal-Oxide-Semiconductor (MOS) Junction: Ideal MOS Capacitor Unlimited
- Lecture 34 – MOS Junction: Q-V Characteristics (cont.) Unlimited
- Lecture 35 – Q-V Characteristics: Non-ideal MOS Capacitor, Energy Band Diagram Unlimited
- Lecture 36 – MOS Junction: Low Frequency and High Frequency C-V Characteristics Unlimited
- Lecture 37 – MOS Junction: Body Effect – Three Terminal MOS Capacitor Unlimited
- Lecture 38 – MOS Field Effect Transistor: Historical Account, Device Structure Unlimited
- Lecture 39 – MOS FET: Common Source DC Characteristics Unlimited
- Lecture 40 – MOS FET: Common Source DC Characteristics (cont.) Unlimited
- Lecture 41 – MOS FET: Common Source DC Characteristics (cont.), Small-Signal Equivalent Circuit Unlimited
- Lecture 42 – Junction FETs, Metal Semiconductor FETs, Heterojunction FETs, etc. Unlimited
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