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Last updated:

September 25, 2023

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This course includes:

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Description

Solid State Devices. Instructor: Prof. S. Karmalkar, Department of Electrical Engineering, IIT Madras.

This course discusses the physics of semiconductors, the structure and fabrication of semiconductor devices as well as the operation of them. Topics include: evolution and uniqueness of semiconductor technology, equilibrium carrier concentration, carrier transport, excess carriers, procedure for analyzing semiconductor devices, pn junctions, bipolar junction transistors, Metal-Oxide-Semiconductor(MOS) junctions, MOS Field Effect Transistors, and other types of FETs such as Junction FETs, Metal Semiconductor FETs and Heterojunction FETs. (from nptel.ac.in)

Course Curriculum

  • Lecture 01 – Introduction to Solid State Devices Unlimited
  • Lecture 02 – Evolution and Uniqueness of Semiconductor Unlimited
  • Lecture 03 – Equilibrium Carrier Concentration: Types of Semiconductors, Thermal Equilibrium Unlimited
  • Lecture 04 – Wave-particle Duality, Bond Model of an Intrinsic Semiconductor Unlimited
  • Lecture 05 – Electron Hole Pair Generation and Recombination, Hole Concept, … Unlimited
  • Lecture 06 – Energy Band Model: Allowed States Unlimited
  • Lecture 07 – Energy Band Model: Distribution of Allowed States over Energy, Fermi-Dirac Function Unlimited
  • Lecture 08 – Energy Band Model: Fermi-Dirac Function and Fermi-Level Unlimited
  • Lecture 09 – Extrinsic Semiconductor under Equilibrium: Bond Model Unlimited
  • Lecture 10 – Band Model of an Extrinsic Semiconductor, Fermi-Dirac Function and Fermi-Level Unlimited
  • Lecture 11 – Estimation of Carrier Concentration and Fermi-Level Unlimited
  • Lecture 12 – Carrier Transport Unlimited
  • Lecture 13 – Carrier Transport: Drift, Diffusion, Mobility Unlimited
  • Lecture 14 – Carrier Transport: Mobility in Silicon, Resistivity in Extrinsic Silicon Unlimited
  • Lecture 15 – Excess Carriers: Injection Level, Quasi-Fermi Level Unlimited
  • Lecture 16 – Excess Carriers: Lifetime, Direct and Indirect Recombination, Surface Recombination Unlimited
  • Lecture 17 – Procedure for Device Analysis Unlimited
  • Lecture 18 – Procedure for Device Analysis (cont.) Unlimited
  • Lecture 19 – PN Junction: Characteristics, Device Structure and Fabrication Unlimited
  • Lecture 20 – PN Junction: Equilibrium Analysis Unlimited
  • Lecture 21 – PN Junction: Equilibrium Analysis – Solved Examples Unlimited
  • Lecture 22 – PN Junction: Ideal I-V Characteristics Unlimited
  • Lecture 23 – PN Junction: I-V Characteristics with Forward Bias Unlimited
  • Lecture 24 – Energy Band Diagram under Forward Bias, Reverse I-V Characteristics Unlimited
  • Lecture 25 – PN Junction: Small-Signal Characteristics Unlimited
  • Lecture 26 – Bipolar Junction Transistor: Historical Account, Device Structure Unlimited
  • Lecture 27 – Bipolar Junction Transistor: Basics of Transistor Action Unlimited
  • Lecture 28 – Bipolar Junction Transistor: Small-Signal Amplification Unlimited
  • Lecture 29 – Bipolar Junction Transistor: Small-Signal Amplification (cont.) Unlimited
  • Lecture 30 – Bipolar Junction Transistor: Common-Emitter I-V Characteristics Unlimited
  • Lecture 31 – Bipolar Junction Transistor: Common-Emitter I-V Characteristics (cont.) Unlimited
  • Lecture 32 – Bipolar Junction Transistor: Small-Signal Equivalent Circuit Unlimited
  • Lecture 33 – Metal-Oxide-Semiconductor (MOS) Junction: Ideal MOS Capacitor Unlimited
  • Lecture 34 – MOS Junction: Q-V Characteristics (cont.) Unlimited
  • Lecture 35 – Q-V Characteristics: Non-ideal MOS Capacitor, Energy Band Diagram Unlimited
  • Lecture 36 – MOS Junction: Low Frequency and High Frequency C-V Characteristics Unlimited
  • Lecture 37 – MOS Junction: Body Effect – Three Terminal MOS Capacitor Unlimited
  • Lecture 38 – MOS Field Effect Transistor: Historical Account, Device Structure Unlimited
  • Lecture 39 – MOS FET: Common Source DC Characteristics Unlimited
  • Lecture 40 – MOS FET: Common Source DC Characteristics (cont.) Unlimited
  • Lecture 41 – MOS FET: Common Source DC Characteristics (cont.), Small-Signal Equivalent Circuit Unlimited
  • Lecture 42 – Junction FETs, Metal Semiconductor FETs, Heterojunction FETs, etc. Unlimited

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