How does the resistance of a conductor change as we shrink its length
all the way down to a few atoms? This is a question that has
intrigued scientists for a long time, but it is only during the last
twenty years that it has become possible for experimentalists to
provide clear answers, leading to enormous progress in our
understanding.

The goal of this series of lectures is to explain the critical concepts in the understanding of the state-of-the-art modeling of nanoelectronic devices such as resonant tunneling diodes, quantum wells, quantum dots, nanowires, and ultra-scaled transistors.

By Vladimir M. Shalaev Purdue University

Traditionally atomistic approaches have been used to model
materials in terms of average parameters like the mobility or the diffusion coefficient
which are then used as inputs to macroscopic device models.

This is a course about how charge flows in semiconductors with an emphasis on transport in nanoscale devices.

Transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to MOSFET device physics are less and less suitable